Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher.
Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?
Some links on this page may take you to non-federal websites. Their policies may differ from this site.
-
Free, publicly-accessible full text available January 1, 2026
-
Free, publicly-accessible full text available April 14, 2026
-
Two distinct ultra-thin Ge1−xSnx (x ≤ 0.1) epilayers were deposited on (001) Si substrates at 457 and 313 °C through remote plasma-enhanced chemical vapor deposition. These films are considered potential initiation layers for synthesizing thick epitaxial GeSn films. The GeSn film deposited at 313 °C has a thickness of 10 nm and exhibits a highly epitaxial continuous structure with its lattice being compressed along the interface plane to coherently match Si without mismatch dislocations. The GeSn film deposited at 457 °C exhibits a discrete epitaxial island-like morphology with a peak height of ∼30 nm and full-width half maximum (FWHM) varying from 20 to 100 nm. GeSn islands with an FWHM smaller than 20 nm are defect free, whereas those exceeding 25 nm encompass nanotwins and/or stacking faults. The GeSn islands form two-dimensional modulated superlattice structures at the interface with Si. The GeSn film deposited at 457 °C possesses a lower Sn content compared to the one deposited at lower temperature. The potential impact of using these two distinct ultra-thin layers as initiation layers for the direct growth of thicker GeSn epitaxial films on (001) Si substrates is discussed.more » « less
-
Unlike the well-studied and technologically advanced Group III-V and Group II-VI compound semiconductor alloys, alloys of ternary metal oxide semiconductors have only recently begun to receive widespread attention. Here, we describe the effect of alkaline earth metal substitution on the optical, electronic, and photoelectrochemical (PEC) properties of copper metavanadate (CuV2O6). As a host, the Cu-V-O compound family presents a versatile framework to develop such composition-property correlations. Alloy compositions of A0.1Cu0.9V2O6(A = Mg, Ca) photoanodes were synthesized via a time and energy-efficient solution combustion synthesis (SCS) method. The effect of introducing alkaline earth metals (Mg, Ca) on the crystal structure, microstructure, electronic, and optical properties of copper metavanadates was investigated by powder X-ray diffraction (PXRD), scanning electron microscopy (SEM), diffuse reflectance spectroscopy (DRS), transmission electron microscopy (TEM), and Raman spectroscopy. The PXRD, TEM, and Raman spectroscopy data demonstrated the polycrystalline powder samples to be mutually soluble, solid solutions of copper and alkaline earth metal metavanadates and not simple mixtures of these compounds. The DRS data showed a systematic decrease in the optical bandgap with Cu incorporation. These trends were corroborated by electronic band structure calculations. Finally, the PEC properties exhibited a strong dependence on the alloy composition, pointing to possible applicability in solar water splitting, heterogeneous photocatalysis, phosphor lighting/displays, and photovoltaic devices.more » « less
-
Here, we demonstrate a two-step electrosynthesis approach for the preparation of silver pyrovanadate, Ag 4 V 2 O 7 in thin-film form. In the first, cathodic step, polycrystalline Ag was deposited on fluorine doped tin oxide (FTO) substrate from a non-aqueous bath. Aqueous pyrovanadate species were then generated by aging of a CO 2 -infused sodium orthovanadate (Na 3 VO 4 ) solution for three weeks. Silver ions were subsequently generated in situ in this medium using anodic stripping of the Ag/ITO films from the first step. Interfacial precipitation of the Ag + ions with the pyrovanadate species afforded the targeted product in phase pure form. The various stages of the electrosynthesis were monitored in situ via the combined use of voltammetry, electrochemical quartz crystal nanogravimetry (EQCN), and coulometry. The Ag 4 V 2 O 7 thin films were characterized by a variety of experimental techniques, including X-ray diffraction, laser Raman spectroscopy, diffuse reflectance spectroscopy, scanning electron microscopy, and high-resolution transmission electron microscopy. Surface photovoltage spectroscopy, ambient-pressure photoemission spectroscopy, and Kelvin probe contact potential difference (work function) measurements afforded information on the energy band structure of the p -type Ag 4 V 2 O 7 semiconductor. Finally, the electrochemical and photoelectrochemical properties of the electrosynthesized Ag 4 V 2 O 7 thin films were studied in both aqueous and non-aqueous electrolytes.more » « less
An official website of the United States government
